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| DTC114TE/DTC114TUA/DTC114TKA DTC114TCA/TC114TSA Elektronische Bauelemente NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film resistors with compete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. PIN CONNENCTIONS AND MARKING DTC114TE (1) Base (2) Emitter (3) Collector Abbreviated symbol: 04 SOT-323 Abbreviated symbol: 04 DTC114TUA (1) Base (1) Base (2) Emitter (2) Emitter (3) Collector (3) Collector SOT-523 DTC114TKA (1) Base (2) Emitter (3) Collector DTC114TCA DTA114ECA (1) Base (1) Base (2) Emitter (2) Emitter (3) Collector (3) Collector SOT-23-3L Abbreviated symbol:04 SOT-23 Abbreviated symbol: 04 DTC114TSA (1) Emitter (2) Collector (3) Base TO-92S http://www.SeCoSGmbH.com l Any changing of specification will not be informed individua 01-Jun-2002 Rev. A Page 1 of 2 Elektronische Bauelemente DTC114TE/DTC114TUA/DTC114TKA DTC114TCA/TC114TSA NPN Digital Transistors (Built-in Resistors) MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter E VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction temperature Junction and Storage Temperature 150 LIMITS(DTC114T) UA KA 50 50 5 100 200 300 CA SA V V V mA mW Units Tj TJ, Tstg 150 -55~+150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Imput resistor Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT R1 unless Test otherwise conditions specified) MIN 50 50 5 0.5 0.5 100 300 600 0.3 250 7 10 13 V MHz k TYP MAX UNIT V V V uA uA Ic=50A,IE=0 Ic=1mA,IB=0 IE=50A,IC=0 VCB=50V,IE=0 VEB=4V,IC=0 VCE=5V,IC=1mA IC=10mA,IB=1mA VCE=10V,IE=-5mA, f=100MHz Typical Characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individua 01-Jun-2002 Rev. A Page 2 of 2 |
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